Trimethylsilane
Trimethylsilane
Formula: C3H10Sᵢ, 3MS
Trimethylsilane (TMS) is a high-purity silicon-based precursor widely used in the semiconductor industry, particularly in the fabrication of advanced memory and microprocessor chips. Its unique chemical properties make it an essential material for a range of front-end-of-line (FEOL) processes.
As a versatile silicon precursor, Trimethylsilane is primarily employed in chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) processes to form thin films such as silicon carbide (SiC), silicon nitride (SiNₓ), and other silicon-containing dielectric layers. These films are critical for hardmask formation, etch-stop layers, barrier films, and low-k dielectric applications, all of which contribute to the miniaturization and performance enhancement of semiconductor devices.
Trimethylsilane’s reactivity, volatility, and compatibility with leading-edge deposition tools make it a preferred choice for node scaling in logic and memory devices, including DRAM, NAND, and advanced logic chips.
EFC Gases & Advanced Materials offers Trimethylsilane with ultra-high purity and tight impurity controls to meet the stringent demands of semiconductor manufacturing, ensuring consistent performance and excellent film quality.
- Used in the production of advanced memory and microprocessor chips
- Precursor molecule used in a variety of front-end semiconductor applications
