Silicon is one of the most important semiconductor materials in microelectronic devices. Majority of disilane (Si2H6) is commercially produced by pyrolysis of silane (SiH4). Disilane is primarily used in the latest and most sophisticated generation of integrated circuits such as NAND Flash memory. It deposits a-Si and silicon dioxide at a lower temperature than silane enabling its use in smaller IC’s with a thermal budget constraint. Disilane can also be reacted with germanium in deposition tools to produce SiGe layers that strain the silicon and improve the performance of single-digit nano scale integrated circuits (ICs).
Silicon is usually deposited by chemical vapor deposition (CVD) at high temperatures ranging from 600 to 1100oC with various silane and chlorosilane precursors. In the deposition of silicon and silicon oxide at low temperatures the silicon growth rate is dependent on the surface kinetic processes. The surface kinetic processes that limit silicon growth at low temperatures are either H2 desorption using silane precursors or HCl desorption using chlorosilane precursors. The strong Si–H bond energy of 90 kcal/mol and the re-combinatory H2 kinetics lead to high desorption temperatures.
Silicon growth could occur at much lower temperatures if hydrogen could be desorbed by nonthermal means. Disilane is free of halides and carbon impurity unlike other Chlorosilanes and alkyl silanes, use of Disilane is semiconductor industry is in silicide or e-silicon processes and Silicon dioxide. Silicon deposition by ALD should find application for depositing ultrathin silicon films on thermally fragile substrates and for bottom-up filling.
- Used in the latest and most sophisticated generation of integrated circuits such as NAND Flash memory.
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