Disilane (Si2H6)
Disilane
Formula: Si2H6, DSi
Disilane (Si2H6) is a colorless, pyrophoric gas consisting of two silicon atoms bonded to six hydrogen atoms. The majority of commercial disilane is produced by the pyrolysis of silane (SiH4). In advanced semiconductor manufacturing, disilane is used for low-temperature deposition of amorphous silicon (a-Si) and silicon dioxide, making it critical for integrated circuits with strict thermal budget constraints, such as NAND Flash memory.
Disilane enables silicon deposition at lower temperatures than silane, as it avoids the high desorption temperatures associated with strong Si–H bonds in silane precursors. This property supports processing on thermally sensitive substrates and allows the formation of ultrathin silicon films using Atomic Layer Deposition (ALD). Disilane can also react with germanium in deposition tools to produce silicon-germanium (SiGe) layers that strain the silicon lattice, improving performance in single-digit nanometer integrated circuits. Free of halides and carbon impurities, it is favored in processes such as silicide formation, e-silicon deposition, and other specialized silicon-based thin-film applications.
Applications include:
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Low-temperature deposition of amorphous silicon and silicon dioxide in advanced integrated circuits.
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Fabrication of NAND Flash memory and other devices with strict thermal budgets.
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Formation of silicon-germanium (SiGe) layers to enhance transistor performance in nanometer-scale ICs.
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Silicide and e-silicon processes in semiconductor device manufacturing.
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Atomic Layer Deposition (ALD) of ultrathin silicon films on thermally fragile substrates.
EFC Gases & Advanced Materials supplies high-purity disilane to meet the stringent requirements of semiconductor manufacturing. Our precise analytical verification, specialized packaging, and controlled logistics ensure consistent quality and safe delivery from production to point-of-use.
Applications
Specifications
Cylinder Sizes
- Deposit amorphous silicon and silicon dioxide at low temperatures.
- Fabricate NAND Flash and other thermally sensitive devices.
- Form silicon-germanium (SiGe) layers to enhance performance.
- Produce silicide and e-silicon structures.
- Apply ultrathin silicon films via Atomic Layer Deposition (ALD).
| Grade 3 | Grade 4 | |
|---|---|---|
| Purity | 99.9 % | 99.99 % |
| Cylinder Size | Fill Volume (lb) |
|---|---|
| 265AL | 50 |
| 150AL | 22 |
Moisture level guaranteed only when EFC Gases & Advanced Materials prepares the cylinders.
All concentrations are on a mol/mol basis unless otherwise stated. Product sold on the basis of total impurities. Individual impurities may vary slightly.
